| PART |
Description |
Maker |
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTFB201402FC PTFB201402FCV1R0XTMA1 PTFB201402FCV1R |
High Power RF LDMOS Field Effect Transistor
|
Infineon Technologies A...
|
| MAPLST0822-002PP |
RF Power Field Effect Transistor LDMOS, 800-2200 MHz, 2W, 28V
|
Tyco Electronics
|
| PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz
LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http://
INFINEON[Infineon Technologies AG]
|
| PTF080101M |
High Power RF LDMOS Field Effect Transistor 10 W, 450 ?960 MHz
|
Infineon Technologies AG
|
| 08090 PTF080901 PTF080901E PTF080901F 8090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| MAPL-000817-015CPC-072706 |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
|
MACOM[Tyco Electronics]
|
| MAPL-000817-015C00 |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
|
Tyco Electronics
|
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| PTF180601 |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
|
Infineon Technologies A...
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
